Key Engineering Materials Vol. 1021

Abstract: This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

Abstract: Vertical high-voltage 4H-SiC superjunction (SJ) MOSFETs have emerged as a superior alternative compared to conventional SiC MOSFET or Si IGBT, as SJ MOSFETs present a better trade-off between specific on-resistance (R_ON,sp) and breakdown voltage (BV). The fabrication of SJ devices requires precise, and multi-step processes, such as multi-epitaxial growth, trench-refill processes, and MeV implantations [3,4,5]. However, these methods increase the overall costs of SJ devices compared to their conventional counterparts, potentially undermining their benefits. This paper compares the chip costs of SJ and conventional MOSFETs at a wide range of BV and current ratings, evaluating the economic feasibility of SJ MOSFETs in 4H-SiC. Our results highlight the potential improvements in SJ fabrication and design to enhance cost-effectiveness, particularly for medium-voltage applications (>3.3kV).