Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon &amp; SiC NPN BJTs

Chengjun Shen; Saeed Jahdi; Mana Hosseinzadehlish; Phil Mellor; Konstantinos Floros; Ingo Lüdtke

doi:10.4028/p-NJz1qy

Paper Titles

Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
p.17

Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
p.25

Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
p.35

Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
p.41

Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
p.51

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
p.59

1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
p.69

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs
p.75

Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts
p.85

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1021Static Analysis of Temperature-Dependence of...

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs

Abstract:

This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

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Periodical:

Key Engineering Materials (Volume 1021)

Pages:

75-83

DOI:

https://doi.org/10.4028/p-NJz1qy

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Online since:

September 2025

Authors:

Chengjun Shen, Saeed Jahdi*, Mana Hosseinzadehlish, Phil Mellor, Konstantinos Floros, Ingo Lüdtke

Keywords:

Bipolar Junction Transistor, Static Performance, Temperature, Vertical Devices

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* - Corresponding Author

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