Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate

Yuta Higashi; Seiji Ishikawa; Kunihide Oozono; Hiroshi Sezaki; Motoki Kobayashi; Hidetsugu Uchida; Mitsuo Okamoto; Shinsuke Harada; Kazutoshi Kojima; Tomohisa Kato; Yasunori Tanaka

doi:10.4028/p-5KX9qK

Paper Titles

Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
p.17

Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
p.25

Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
p.35

Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
p.41

Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
p.51

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
p.59

1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
p.69

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs
p.75

Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts
p.85

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1021Superior Characteristics of Body Diode in DMOSFET...

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate

Abstract:

A novel substrate of 4H-SiC bonded substrate is expected to solve issues such as decreasing the on-resistance, which has attracted much attention. Therefore, several studies have been conducted on the use of bonded substrates. In this study, we fabricated a DMOSFET on a bonded substrate and compared its static and dynamic characteristics with those on a single-crystal substrate. Consequently, the on-resistance of the DMOSFET fabricated on a bonded substrate was lower than that on a single-crystal substrate owing to the low resistivity of the polycrystalline substrate. Also, reverse recovery loss of the DMOSFET fabricated on a bonded substrate was lower than that on single-crystal substrate at high temperature due to low carrier lifetime in a drift layer. Additionally, we observed that the DMOSFET fabricated on a bonded substrate did not generate bipolar degradation despite the application of a forward-current stress of over 1500 A cm^-². According to these results, we expected that the carrier lifetime in both drift layer and transfer layer was decreased on a bonded substrate.

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Periodical:

Key Engineering Materials (Volume 1021)

Pages:

59-67

DOI:

https://doi.org/10.4028/p-5KX9qK

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Online since:

September 2025

Authors:

Yuta Higashi*, Seiji Ishikawa, Kunihide Oozono, Hiroshi Sezaki, Motoki Kobayashi, Hidetsugu Uchida, Mitsuo Okamoto, Shinsuke Harada, Kazutoshi Kojima, Tomohisa Kato, Yasunori Tanaka

Keywords:

Bipolar Degradation, Bonded Substrate, DMOSFET, Dynamic Characteristics, High Temperature Reliability, Static

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* - Corresponding Author

References

[1] S. Rouchier, G. Gaudin, J. Widiez, Materials Science Forum 1062, p.131, (2022)

Google Scholar

[2] H. Biard, S. Odoul, W. Schwarzenbach, I. Radu, C. Maleville, A. Potier, M. Ferrato, E. Guajioty Solid State Phenomena 344, p.47, (2023)

DOI: 10.4028/p-65127n

Google Scholar

[3] M. Kobayashi, H. Uchida, N. Hatta, S. Ishikawa, Y. Higashi, H. Sezaki, S. Harada, K. Kojima, Abstract of ICSCRM, (2024)

Google Scholar

[4] N. Hatta, M. S. Ishikawa, K. Ozono, K. Masumoto, K. Yagi, M. Kobayashi, S. Kurihara, S. Harada, K. Kojima, Key Engineering Materials 948, p.107, (2023)

DOI: 10.4028/p-628fu5

Google Scholar

[5] H. Uchida, M. Kobayashi, N. Hatta, S. Ishikawa, K. Ozono, K. Masumoto, S. Kurihara, S. Harada, K. Kojima, Proceeding of ICSCRM, p.209, (2023)

Google Scholar

[6] H. Uchida, M. Kobayashi, N. Hatta, S. Ishikawa, Y. Higashi, K. Masumoto, S. Kurihara, S. Harada, K. Kojima, Abstract of ICSCRM, (2024)

Google Scholar

[7] G. Wang, L. Yuan, X. Wang, Y. Zhang. R. Jia, Journal of Crystal Growth 606, 127086, (2023)

Google Scholar

[8] Information on https://www.sicoxs.com/en/product/

Google Scholar