Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
p.17
p.17
Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
p.25
p.25
Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
p.35
p.35
Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
p.41
p.41
Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
p.51
p.51
Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
p.59
p.59
1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
p.69
p.69
Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs
p.75
p.75
Economic Feasibility Analysis of Vertical High-Voltage 4H-SiC Superjunction MOSFETs Compared to Conventional Counterparts
p.85
p.85
1200 V 4H-SiC VDMOSFET Having > 2.5x On-Current Improvement
Abstract:
We experimentally demonstrated >2.5x on-current improvement on VDMOSFET fabricated in a standard 1200 V-rated 4H-SiC based VDMOSFET. The on-current improvement is achieved by applying a positive bias to the p-well region when the VDMOSFET is in the on-state. A >104 ratio between the on-current gain and the p-well current gain is shown. TCAD simulations are performed to study the underlying mechanisms of the on-current gain.
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Periodical:
Key Engineering Materials (Volume 1021)
Pages:
69-74
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Online since:
September 2025
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