Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance

Abstract:

In this work, we investigate the static electrical parameters of 1200 V 4H-SiC power diodes with various designs and architectures (Schottky, PiN, and JBS with hexagonal or stripes anode), fabricated on two types of 150 mm substrates (single crystal 4H-SiC reference and 3C-poly silicon carbide based substrates: SmartSiC^TM). I(V) measurements are carried out in both reverse and forward modes to assess the impact of designs and substrates. Non-destructive avalanche mode is reached with similar performance (leakage, V_AV) observed for both substrates (due to identical drift layers and device structures). All diode designs on SmartSiC^TM exhibit a larger current conduction and less resistance in the ohmic regime (compared to bulk), whatever the temperature (up to 200°C). Partitioning model is also proposed for evaluating the substrate contribution on the measured specific resistance and on the observed SmartSiC^TM gains.

• Periodical: Key Engineering Materials (Volume 1021)
• Pages: 41-50
• DOI: https://doi.org/10.4028/p-4FJgLU
• Online since: September 2025
• Authors: Ahmad Abbas*, Cyrille Le Royer, Romain Laviéville, Jérôme Biscarrat, Guillaume Gelineau, Frédéric Allibert, Edwige Bano, Philippe Godignon
• Keywords: 1200 V, Bulk, Diode, Forward, JBS, PiN, R_DIF, Resistance, Reverse, Schottky, SiC, SmartSiC, Substrate, Temperature

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