Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-Sic MOSFET

Naoki Shikama; Kazuya Ishibashi; Hiroki Niwa; Takanori Tanaka; Hiroyuki Amishiro; Akifumi Imai; Katsutoshi Sugawara; Yasuhiro Kagawa; Akihiko Furukawa

doi:10.4028/p-47sFxF

Paper Titles

Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor
p.1

Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-Sic MOSFET
p.7

Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
p.17

Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
p.25

Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
p.35

Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
p.41

Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
p.51

Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
p.59

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1021Investigation on Effect of Electrical...

Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-Sic MOSFET

Abstract:

We investigated how proton implantation influences electrical characteristics of the 4H-SiC MOSFETs. Bipolar degradation in SiC is one of the key issues to be solved for utilizing the bipolar operation in SiC power devices. Its suppression with the proton implantation technique has recently been reported. If we can apply such a new technique being involved for realizing reliable SiC MOSFETs, it would give us great merit to take advantage of the body diode. However, few study has been reported of proton implanted SiC MOSFETs, to our knowledge. Thus, we fabricated 4,000 chips, applied current stress to their body diodes and subsequently evaluated them to verify statistically any effectiveness on the suppression of the bipolar degradation as well as on the electrical performance of MOSFET in order to consider its technological applicability to their mass production process. We found that proton implantation not only has little influence on the static electrical characteristics of the MOSFETs but also improves the switching characteristics.

By email View Pdf

You have full access to the following eBook

Read eBook

Info:

Periodical:

Key Engineering Materials (Volume 1021)

Pages:

7-15

DOI:

https://doi.org/10.4028/p-47sFxF

Citation:

Cite this paper

Online since:

September 2025

Authors:

Naoki Shikama*, Kazuya Ishibashi, Hiroki Niwa, Takanori Tanaka, Hiroyuki Amishiro, Akifumi Imai, Katsutoshi Sugawara, Yasuhiro Kagawa, Akihiko Furukawa

Keywords:

Bipolar Degradation, Body Diode, Electrical Characteristics, MOSFET, Proton Implantation

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] T. Tawara, T. Miyazawa, M. Ryo, M. Miyazato, T. Fujimoto, K. Takenaka, S. Matsunaga, M. Miyajima, A. Otsuki, Y. Yonezawa, T. Kato, H. Okumura, T. Kimoto and H. Tsuchida, J. Appl. Phys. 120, 115101 (2016).

DOI: 10.1063/1.4962717

Google Scholar

[2] M. Kato, O. Watanabe, T. Mii, H. Sakane and S. Harada, Sci. Rep. 12, 18790 (2022).

Google Scholar

[3] S. Harada, T. Mii, H. Sakane and M. Kato, Sci. Rep. 12, 13542 (2022).

Google Scholar

[4] M. Kato, S. Harada and H. Sakane, Jpn. J. Appl. Phys. 63, 020804 (2024).

Google Scholar

[5] M. Skowronski and S. Ha, J. Appl. Phys. 99, 011101 (2006).

Google Scholar

[6] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell, Phys. Status Solidi A 162, 199 (1997).

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[7] T. Dalibor, C. Peppermüller, G. Pensl, S. Sridhara, R. P. Devaty, W. J. Choyke, A. Itoh, T. Kimoto and H. Matsunami, Inst. Phys. Conf. Ser. 142, 517 (1996).

DOI: 10.1063/1.114800

Google Scholar

[8] P. B. Klein, B. V. Shanabrook, S.W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris and M. J. O'Loughlin, Appl. Phys. Lett. 88, 052110 (2006).

Google Scholar

[9] K. Danno, D. Nakamura and T. Kimoto, Appl. Phys. Lett. 90, 202109 (2007).

Google Scholar

[10] C. Zechner, M. Tanaka, K. Shimai, N. Zographos, S. Kanie and S. Tsuboi, J. Appl. Phys. 132, 035702 (2022).

Google Scholar