Preface
Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor
p.1
p.1
Investigation on Effect of Electrical Characteristics of Proton Implanted 4H-Sic MOSFET
p.7
p.7
Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
p.17
p.17
Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
p.25
p.25
Impact of Single-Step Deep P-Body Implant on 1.2 kV 4H-SiC MOSFET
p.35
p.35
Temperature Dependence of 1200V-10A SiC Power Diodes Impact of Design and Substrate on Electrical Performance
p.41
p.41
Designs of 1.2 kV Rated Semi-Superjunction MOSFET on the 2D and 3D Planes for Practical Realization
p.51
p.51
Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
p.59
p.59
Preface
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Key Engineering Materials (Volume 1021)
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September 2025
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