Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Abstract:

In this paper, the static and dynamic characterization of a High Voltage (10kV) 4H-SiC Bipolar Junction Transistor (BJT) is presented. Using a high-voltage source in vacuum conditions, a breakdown voltage of 11 kV was measured. Results showed that both large and small BJTs exhibit similar on-state resistance per unit area and collector current density of 55 A.cm^-2. The current gain increases with a decrease in temperature, indicating reduced charge carrier recombination at lower thermal energies. Also, BJT have been characterized in switching mode at 1 kV. The study concludes that 4H-SiC BJT demonstrates promising electrical performance for high-efficiency applications in harsh environments.

• Periodical: Key Engineering Materials (Volume 1021)
• Pages: 1-6
• DOI: https://doi.org/10.4028/p-T0Vjdb
• Online since: September 2025
• Authors: Pierre Brosselard*, Brenda Fosso-Sob, Dominique Planson, Pascal Bevilacqua, Camille Sonneville, Mihai Lazar, Bertrand Vergne, Sigo Scharnholz, Hervé Morel
• Keywords: 4H-SiC, Bipolar Junction Transistor, Electrical Characterization, High Voltage

References

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