Key Engineering Materials
Vol. 1023
Vol. 1023
Key Engineering Materials
Vol. 1022
Vol. 1022
Key Engineering Materials
Vol. 1021
Vol. 1021
Key Engineering Materials
Vol. 1020
Vol. 1020
Key Engineering Materials
Vol. 1019
Vol. 1019
Key Engineering Materials
Vol. 1018
Vol. 1018
Key Engineering Materials
Vol. 1017
Vol. 1017
Key Engineering Materials
Vol. 1016
Vol. 1016
Key Engineering Materials
Vol. 1015
Vol. 1015
Key Engineering Materials
Vol. 1014
Vol. 1014
Key Engineering Materials
Vol. 1013
Vol. 1013
Key Engineering Materials
Vol. 1012
Vol. 1012
Key Engineering Materials
Vol. 1011
Vol. 1011
Key Engineering Materials Vol. 1023
Paper Title Page
Abstract: This work presents simple layout configurations for current sensing resistor networks to measure fast and high currents in SiC devices. The proposed layout reduces the inserted inductance in the switching loop when compared to coaxial shunts, which is key for the application of SiC devices in space. High inductance in the switching loop leads to dangerous overshoots during turn-off transients, that can block the adoption of SiC devices in space due to single event burnouts. After presenting the different proposed layouts, the inserted inductance of each one is measured with an impedance analyzer as well as performing switching tests. Applying field cancellation techniques in the layout of a simple parallel resistor network, the inserted inductance is reduced up to 17.6 % when compared to a coaxial shunt, while obtaining the same current sensing performance.
65