Fast High Current Sensing SMD Resistor Network Layout for Low Inductance Insertion

Abstract:

This work presents simple layout configurations for current sensing resistor networks to measure fast and high currents in SiC devices. The proposed layout reduces the inserted inductance in the switching loop when compared to coaxial shunts, which is key for the application of SiC devices in space. High inductance in the switching loop leads to dangerous overshoots during turn-off transients, that can block the adoption of SiC devices in space due to single event burnouts. After presenting the different proposed layouts, the inserted inductance of each one is measured with an impedance analyzer as well as performing switching tests. Applying field cancellation techniques in the layout of a simple parallel resistor network, the inserted inductance is reduced up to 17.6 % when compared to a coaxial shunt, while obtaining the same current sensing performance.

• Periodical: Key Engineering Materials (Volume 1023)
• Pages: 65-70
• DOI: https://doi.org/10.4028/p-AGxS8Q
• Online since: September 2025
• Authors: Antxon Arrizabalaga*, Jesus Oliver
• Keywords: Current Measurement, High Power, Layout, Silicon Carbide (SiC), Space Electronics, Stray Inductance

References

[1] Nasa, "NASA's lunar exploration program overview," 2020.

[2] European Space Agency (ESA), "ESA lunar exploration journey." Accessed: May 14, 2024. [Online]. Available: https://lunarexploration.esa.int/intro

[3] A. F. Witulski et al., "Single-event burnout mechanisms in SiC power MOSFETs," IEEE Trans Nucl Sci, vol. 65, no. 8, p.1951–1955, Aug. 2018.

DOI: 10.1109/TNS.2018.2849405

[4] R. A. Johnson et al., "Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes," IEEE Trans Nucl Sci, vol. 67, no. 1, p.135–139, Jan. 2020.

DOI: 10.1109/TNS.2019.2947866

[5] A. Witulski et al., "Single-event effects in silicon carbide high voltage power devices for lunar exploration," 2023.

[6] Severin Klever and Rik W. De Doncker, "A High-Bandwidth and Low-Inductive Sensor for Measuring the Commutation Current of WBG Devices," in EPE'23 ECCE Europe, 2023.

DOI: 10.23919/epe23ecceeurope58414.2023.10264674

[7] Markus Meißner, Jan Schmitz, Felix Weiß, and Steffen Bernet, "Current measurement of GaN power devices using a frequency compensated SMD shunt," in PCIM Europe, 2019.

[8] H. W. Johnson and M. Graham, High-speed digital design: A handbook of black magic. 1993.

[9] H. Gui et al., "Methodology of low inductance busbar design for three-level converters," IEEE J Emerg Sel Top Power Electron, vol. 9, no. 3, p.3468–3478, Jun. 2021.

DOI: 10.1109/JESTPE.2020.2999403

[10] Niloofar Rashidi Mehrabadi, Igor Cvetkovic, Jun Wang, Rolando Burgos, and Dushan Boroyevich, "Busbar design for SiC-based H-bridge PEBB using 1.7 kV, 400 A SiC MOSFETs operating at 100 kHz," in IEEE Energy Conversion Congress and Exposition (ECCE), IEEE, 2016.

DOI: 10.1109/ecce.2016.7854903

[11] Z. Chen, "Characterization and modeling of high-switching-speed behavior of SiC active devices," Master Thesis, Virginia Polytechnic Institute and State Univ., Blacksburg, USA, 2009.