Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs

Jae Hoon Park; Siddarth Sundaresan; Aditi Agarwal; Vamsi Mulpuri; Steven Dail; Yu Dong; Nathaniel Walsh

doi:10.4028/p-e2ZeVx

Paper Titles

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A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
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Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
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Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
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A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
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Design and Simulation of Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1023Investigation of Advanced Hexagonal Layouts for...

Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs

Abstract:

A set of novel features for the planar gate SiC MOSFETs with the hexagonal unit cell were investigated in terms of the R_DS,ON and reliability (HTRB/HTGB) perspectives. The fabricated SiC MOSFETs with the proposed features improved the R_DS,ON by 9~14% compared to the SiC MOSFETs with the conventional striped unit cell. From the R _DS,ON temperature coefficient perspective (RT Vs. 150°C), the SiC MOSFETs with the proposed features were close to the same counterpart with the marginal difference of ~2%. The SiC MOSFETs with the proposed features showed tighter R_DS,ON and I _D,SS spatial distributions in comparison to the SiC MOSFETs without the proposed features. Two batches of the SiC MOSFETs with select feature were tested for HTRB under the over-stressed conditions. One batch passed the 1,000hr HTRB test and another batch had one I _D,SS failure at 600hr with no further failure up until 1,000hr.

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Periodical:

Key Engineering Materials (Volume 1023)

Pages:

39-46

DOI:

https://doi.org/10.4028/p-e2ZeVx

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Online since:

September 2025

Authors:

Jae Hoon Park*, Siddarth Sundaresan, Aditi Agarwal, Vamsi Mulpuri, Steven Dail, Yu Dong, Nathaniel Walsh

Keywords:

HEXFET, Planar Gate SiC MOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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