A Physics-Based SPICE Model for a SiС Vertical Power MOSFET

Abstract:

Wide-bandgap silicon carbide (SiC) devices have shown great promise in power control systems due to its high efficiency and thermal stability. However, the absence of predictive compact models for SiC MOSFETs has hindered the validation of these benefits in power electronics applications through circuit simulations. To address this challenge, we introduce a physics-based SPICE model (PbSM) for SiC vertical power MOSFETs. This model is composed of basic subcircuit components that represent various regions in the MOSFET structure, which are physically modeled using a technology computer-aided design (TCAD) tool. By incorporating parasitic resistors into the PbSM, we incorporate the body effect within the MOS channel model with four terminals, thereby enhancing the capability of SPICE simulations. We include theoretical output (C_oss) and reverse transfer capacitances (C_rss) to simulate transient simulations based on a double-pulse test (DPT) setup. SPICE simulation results for static and dynamic characteristics have excellent agreement with the measured characteristics of a SiC MOSFET device, confirming the capability of the model in switching characteristics with voltage distribution across the multiple components. The PbSM shows the impact of parameter variations in switching performance, which promises valuable insights for modeling of the corner cases. Finally, the PbSM is computationally efficient, showing meaningful competitiveness compared to existing SPICE models for SiC power MOSFETs.

• Periodical: Key Engineering Materials (Volume 1023)
• Pages: 13-20
• DOI: https://doi.org/10.4028/p-fG2SXX
• Online since: September 2025
• Authors: Ji Hun Lim*, Arman Ur Rashid, Britt Brooks, Sei Hyung Ryu
• Keywords: Physics-Based Modeling, Power MOSFET, SPICE Simulation, Switching Behavior, TCAD

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