Preface
Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes
p.1
p.1
Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device
p.7
p.7
A Physics-Based SPICE Model for a SiС Vertical Power MOSFET
p.13
p.13
A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
p.21
p.21
Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
p.29
p.29
Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
p.39
p.39
A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
p.47
p.47
Design and Simulation of Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
p.53
p.53
Preface
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Periodical:
Key Engineering Materials (Volume 1023)
Online since:
September 2025
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