Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Dominique Planson; Camille Sonneville; Pascal Bevilacqua; Pierre Brosselard; Mihai Lazar; Sigo Scharnholz; Bertrand Vergne; Hervé Morel

doi:10.4028/p-0v5tyE

Paper Titles

Preface

Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes
p.1

Cost-Effective Design and Optimization of a 3300-V Semi-Superjunction 4H-SiC MOSFET Device
p.7

A Physics-Based SPICE Model for a SiС Vertical Power MOSFET
p.13

A Novel 'Ladder' Design for Improved Channel Density for 1.2kV 4H-SiC MOSFETs
p.21

Single-Event-Burnout in 1.2kV 4H-SiC Lateral RESURF Power MOSFET
p.29

Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs
p.39

A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application
p.47

Design and Simulation of Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation
p.53

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1023Matching Physical and Electrical Measurements...

Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Abstract:

This paper presents for the first time a comparison between experimental measurements of Optical Beam Induced Current (OBIC) and finite element simulations on high-voltage bipolar diodes. Two peripheral protection structures were chosen: a simple MESA protection and a MESA + JTE combination. Comparable experimental and simulated results were obtained in both cases.

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Periodical:

Key Engineering Materials (Volume 1023)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-0v5tyE

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Online since:

September 2025

Authors:

Dominique Planson*, Camille Sonneville, Pascal Bevilacqua, Pierre Brosselard, Mihai Lazar, Sigo Scharnholz, Bertrand Vergne, Hervé Morel

Keywords:

Bipolar Diode, Device Simulation, High Voltage, OBIC Characterization, Periphery Protection

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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