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Preface
Thermal, Mechanical, and Materials Aspects of a Shape Memory Alloy Stirling Heat Engine
p.1
Optimization of Hydrogen Alarm Sensor on Semiconductor Basis
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Optimization of Hydrogen Alarm Sensor on Semiconductor Basis

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Abstract:

A semiconductor based hydrogen sensor system was optimized by various modifications, which allow an improved detection of very low concentrations of hydrogen in air. The foundation for new investigations on the sensor structure are modifications of substrate and gate structures. Establishment of reference structures is a major aim. A possible drift compensation could be the use of aluminum or alloys for sensor system in order to stabilize signal in Metal Oxide Semiconductor (MOS) respectively Metal Electrolyte Insulator Semiconductor (MEIS) structures. Gold is more likely not capable to function for drift compensation as a pure metal. NafionTM treatment for cover up the palladium gate seems not to be suitable as a reference, besides could be an option to stabilize sensor signal responses and protect sensors from environmental influences.

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Info:

Periodical:

Key Engineering Materials (Volume 1039)

Pages:

9-14

DOI:

https://doi.org/10.4028/p-rXGAe6

Citation:

Cite this paper

Online since:

January 2026

Authors:

Ronald Werner*, Paolo Prosposito, Andrea Böhme, René Krenz-Baath

Keywords:

Alarm Sensor, Hydrogen Sensor, Optimized Structures, Semiconductor Sensor

Funder:

The publication of this article was funded by the Technische Hochschule Wildau

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Creative Commons CC BY 4.0

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* - Corresponding Author

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