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HomeKey Engineering MaterialsKey Engineering Materials Vols. 214-215Metal-Oxide-Semiconductor (MOS) Devices Composed...

Metal-Oxide-Semiconductor (MOS) Devices Composed of Biomimetically Synthesized TiO₂ Dielectric Thin Films

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Asian Ceramic Science for Electronics I

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Periodical:

Key Engineering Materials (Volumes 214-215)

Pages:

163-170

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.214-215.163

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Online since:

July 2001

Authors:

Dejun Wang, Yoshitake Masuda, Won Seon Seo, Kunihito Koumoto

Keywords:

Biomimetic Method, Dielectric, MOS, Thin Film, TiO₂

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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