Metal-Oxide-Semiconductor (MOS) Devices Composed of Biomimetically Synthesized TiO2 Dielectric Thin Films

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Periodical:

Key Engineering Materials (Volumes 214-215)

Edited by:

M. Murata, K. Koumoto and T. Takenaka, S. Fujitsu

Pages:

163-170

DOI:

10.4028/www.scientific.net/KEM.214-215.163

Citation:

D. Wang et al., "Metal-Oxide-Semiconductor (MOS) Devices Composed of Biomimetically Synthesized TiO2 Dielectric Thin Films", Key Engineering Materials, Vols. 214-215, pp. 163-170, 2002

Online since:

July 2001

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