The Effects of Si Addition on Electrical Degradation of ZnO Varistors

Yohei Satoi; Hideki Hirai; Hiroyuki Yoshino; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.269.83

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Optical Properties of PLZT Thin Films Fabricated by a Sol-Gel Method
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Sintering Behavior of ZnO Nanoparticles and Preparation of Nanoporous ZnO Compacts
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Doping of Bonds into ZnO Films and the Changes of their Electric Properties
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The Effects of Si Addition on Electrical Degradation of ZnO Varistors
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Preparation of Nanoporous TiO₂ Film Using Aqueous Sol with Trehalose
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Phase Control in High-Temperature Superconductors and Novel Fabrication Procedure for Superconducting Components
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Luminescence of CuAlS₂ Film by Iodine Transport Method
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 269The Effects of Si Addition on Electrical...

The Effects of Si Addition on Electrical Degradation of ZnO Varistors

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Key Engineering Materials (Volume 269)

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83-86

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.269.83

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Online since:

August 2004

Authors:

Yohei Satoi, Hideki Hirai, Hiroyuki Yoshino, Shinzo Yoshikado

Keywords:

C-V Characteristics, Electrical Degradation, ICTS Interface States, I-V Characteristics, Si Additions, X-Ray Diffraction (XRD), ZnO Varistor

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References

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