[1]
W. L. Warren, D. Dimos, B. A. Tuttle, G. E. Pike, R. W. Schwartz, P. J. Clews, and D. C. McIntyre, J. Appl. Phys. 77(1995), p.6695.
Google Scholar
[2]
A. K. Tagantsev, I. Stolichnov, E. L. Colla, and N. Setter, J. Appl. Phys., 90 (2001), p.1387.
Google Scholar
[3]
K. Maruyama, K. Asaka, O. Matsuura, M. Kurasawa, H. Hyodo, S. Umemiya, K. Kurihara, K. Matsuura, K. Takai, M. Nakabayashi, Y. Horii and T. Eshita, Abstract of the Non-Volatile Semiconductor Memory workshop on IEEE, 2003(2003), p.101.
Google Scholar
[4]
J.S. Cross, M. Fujiki, M. Tsukada, Y. Kotaka and Y. Goto, Integrated Ferroelectrics, 21 (1998) 263. e-mail: o-matsuura@jp. fujitsu. com Fax: +81-46-248-8812, http: /www. labs. fujitsu. com.
Google Scholar