Surface Characterization of Electrochemically Fabricated CuO Doped ZnO Thin Film

Abstract:

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In this study, ZnO and CuO doped zinc oxide thin films were cathodically deposited in aqueous zinc chloride solutions in the presence of oxygen on a Pt/Ti/SiO2/Si substrate through an electrochemical reaction. A mercurous sulfate electrode was used as a reference electrode and the counter electrode was a Pt spiral wire. Deposition was carried out in solutions containing Zn2+ ions introduced as ZnCl2 salt at concentrations ranging from 5.0 x 10-4 to 5.0 x 10-2 M. The bath temperatures were controlled from 65°C to 80°C. The oxygen gas was introduced from argon/oxygen mixtures allowing its partial pressure to be fixed along with its concentration in the solution. Doping of CuO was carried out in cupric nitrate or a cupric chloride/0.1M KCl solution. The influence of the Cu/Zn concentration, deposition temperature of a solution, applied cathodic potential and deposition time were optimized. After the potential was applied, the cathodic current reached a steady state within 5 min. The composition, and the characterization of the surface of the films were investigated through X-ray diffractometry, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy.

Info:

Periodical:

Key Engineering Materials (Volumes 277-279)

Edited by:

Kwang Hwa Chung, Yong Hyeon Shin, Sue-Nie Park, Hyun Sook Cho, Soon-Ae Yoo, Byung Joo Min, Hyo-Suk Lim and Kyung Hwa Yoo

Pages:

972-976

DOI:

10.4028/www.scientific.net/KEM.277-279.972

Citation:

J. H. Yoon et al., "Surface Characterization of Electrochemically Fabricated CuO Doped ZnO Thin Film", Key Engineering Materials, Vols. 277-279, pp. 972-976, 2005

Online since:

January 2005

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Price:

$35.00

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