Preparation of (111)-Oriented Pt Electrode Films with Quasi-Monocrystal Properties on MgO/TiN Buffered Si(100) by PLD

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Atomic-scale smooth Pt electrode films have been deposited on MgO/TiN buffered Si (100) by the pulsed laser deposition (PLD) technique. The whole growth process of the multilayer films was monitored by using in-situ reflection high energy electron diffraction (RHEED) apparatus. The Pt/MgO/TiN/Si(100) stacked structure was also characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The HREED observations show that the growth mode of the Pt electrode film is 2D layer-by-layer growth. It is found that the (111)-oriented Pt electrode film has a crystallinity comparable to that of monocrystals. The achievement of the quasi-single-crystal Pt electrode film with an atomic-scale smooth surface is ascribed to the improved crystalline quality of the MgO film.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

823-826

Citation:

T. L. Chen and X. M. Li, "Preparation of (111)-Oriented Pt Electrode Films with Quasi-Monocrystal Properties on MgO/TiN Buffered Si(100) by PLD", Key Engineering Materials, Vols. 280-283, pp. 823-826, 2005

Online since:

February 2007

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$38.00

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