Growth and Characterizations of Relaxor-Based Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films by Sol-Gel Method

Hui Qing Fan

doi:10.4028/www.scientific.net/KEM.280-283.839

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The Properties of Antimony-Doped Tin Oxide Thin Films by the Sol-Gel Approach
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On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process
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Growth and Characterizations of Relaxor-Based Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Thin Films by Sol-Gel Method
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Synthesis and Microstructure of Barium Bismuth Titanate Thin Films Using a Sol-Gel Technique
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283Growth and Characterizations of Relaxor-Based...

Growth and Characterizations of Relaxor-Based Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Thin Films by Sol-Gel Method

Abstract:

Relaxor-based 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were grown epitaxially on silicon substrates by sol-gel method and PbO cover coat technique, and investigated by x-ray diffraction, auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The phase development and microstrure evolution of the PMN-PT film were significantly affected by the final annealing temperature and time. A perovskite PMN-PT film was obtained after annealing at 850oC for 1 min. Then, highly <100>-oriented and textured PMN-PT films could be achieved by using a LaNiO3 perovskite template.

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Key Engineering Materials (Volumes 280-283)

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839-844

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https://doi.org/10.4028/www.scientific.net/KEM.280-283.839

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February 2007

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Hui Qing Fan

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Growth, PMN-PT Thin Films, Sol-Gel (SG), Textured

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