Growth and Characterizations of Relaxor-Based Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films by Sol-Gel Method

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Relaxor-based 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were grown epitaxially on silicon substrates by sol-gel method and PbO cover coat technique, and investigated by x-ray diffraction, auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The phase development and microstrure evolution of the PMN-PT film were significantly affected by the final annealing temperature and time. A perovskite PMN-PT film was obtained after annealing at 850oC for 1 min. Then, highly <100>-oriented and textured PMN-PT films could be achieved by using a LaNiO3 perovskite template.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

839-844

DOI:

10.4028/www.scientific.net/KEM.280-283.839

Citation:

H. Q. Fan "Growth and Characterizations of Relaxor-Based Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films by Sol-Gel Method", Key Engineering Materials, Vols. 280-283, pp. 839-844, 2005

Online since:

February 2007

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$35.00

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