On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process

Gang Du; Dao Li Zhang; Lan Zhao; Jian Mei Xu; Dong Xiang Zhou

doi:10.4028/www.scientific.net/KEM.280-283.835

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283On the Microstructure and Electrical Properties of...

On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process

Abstract:

Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Ω/□

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Periodical:

Key Engineering Materials (Volumes 280-283)

Pages:

835-838

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.280-283.835

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Online since:

February 2007

Authors:

Gang Du, Dao Li Zhang, Lan Zhao, Jian Mei Xu, Dong Xiang Zhou

Keywords:

ATO, Sol-Gel (SG), Thin Film

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References

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