On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process

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Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Ω/□

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Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

835-838

Citation:

G. Du et al., "On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process", Key Engineering Materials, Vols. 280-283, pp. 835-838, 2005

Online since:

February 2007

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