Friction Characteristic of Wafer Surface in Chemical Mechanical Polishing

Zhen Yuan Jia; Jian Xiu Su; Zhu Ji Jin; Dong Ming Guo; L.P. Li

doi:10.4028/www.scientific.net/KEM.291-292.389

Paper Titles

Precision Abrasive Jet Finishing of Cemented Carbide
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Measurement of Surface Roughness and Thickness of Silicon Wafers Using an Infrared Laser
p.377

Investigation of Chemical Mechanical Polishing of GaAs Wafer by the Effect of a Photocatalyst
p.381

Machining Mechanisms of Si Wafers in Mechanochemical Polishing by Soft Abrasives
p.385

Friction Characteristic of Wafer Surface in Chemical Mechanical Polishing
p.389

Corrosion Inhibiting Effect on Copper Chemical Mechanical Planarization (CMP) in Fe(NO₃)₃ Based Slurries
p.395

Nano Mechanical Processing of Silicon by Atomic Force Microscopy
p.401

Application of Nanometer-Scale Processing Technique in High-Density Recording
p.407

Optimization of the Chemical Vapor Deposition Induced Focused Ion Beam
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 291-292Friction Characteristic of Wafer Surface in...

Friction Characteristic of Wafer Surface in Chemical Mechanical Polishing

Abstract:

The friction force of wafer surface plays an important role in removing material of wafer surface and the friction force distribution on wafer surface has a direct influence on nonuniformity of material removal in wafer CMP process. In this paper, models of friction force distribution and friction force on wafer surface were built according to the CMP process. Then the relationships between friction force and CMP process variables, such as the motion variables and pressure, are obtained. Measuring data of friction force on wafer surface are accord with analytical results. The research of this paper is helpful to further understanding the material removal mechanism in wafer CMP.

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Periodical:

Key Engineering Materials (Volumes 291-292)

Pages:

389-394

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.291-292.389

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Online since:

August 2005

Authors:

Zhen Yuan Jia, Jian Xiu Su, Zhu Ji Jin, Dong Ming Guo, L.P. Li

Keywords:

Chemical Mechanical Polishing (CMP), Friction, Material Removal Rate (MRR), Wafer

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References

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