Investigation of Chemical Mechanical Polishing of GaAs Wafer by the Effect of a Photocatalyst

S.H. Hong; H. Isii; Mutsumi Touge; Junji Watanabe

doi:10.4028/www.scientific.net/KEM.291-292.381

Paper Titles

Improvement of Machined Surface Flatness in Ultra-Precision Plane Honing
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Precision Abrasive Jet Finishing of Cemented Carbide
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Measurement of Surface Roughness and Thickness of Silicon Wafers Using an Infrared Laser
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Investigation of Chemical Mechanical Polishing of GaAs Wafer by the Effect of a Photocatalyst
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Machining Mechanisms of Si Wafers in Mechanochemical Polishing by Soft Abrasives
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Friction Characteristic of Wafer Surface in Chemical Mechanical Polishing
p.389

Corrosion Inhibiting Effect on Copper Chemical Mechanical Planarization (CMP) in Fe(NO₃)₃ Based Slurries
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Nano Mechanical Processing of Silicon by Atomic Force Microscopy
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 291-292Investigation of Chemical Mechanical Polishing of...

Investigation of Chemical Mechanical Polishing of GaAs Wafer by the Effect of a Photocatalyst

Abstract:

The GaAs wafer is widely applied to semiconductor element related to telecommunication and semiconductor laser. In this research, novel fine polishing technology of GaAs wafer was investigated using TiO2-H2O2-H2O slurry system instead of NaOCl which is conventionally used as polishing slurry. And then the ultraviolet ray was applied in order to investigate the effect of TiO2 photocatalyst. The polishing characteristics were estimated by optical microscope and WYKO optical profiler. It was found that the slurry system was available for GaAs wafer polishing although the polishing rate was lower than NaOCl. Moreover, the effect of the photocatalyst of TiO2 including in slurry was investigated. In this polishing system, the effect of the photocatalyst on GaAs wafer CMP mechanism has not been confirmed yet.

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Periodical:

Key Engineering Materials (Volumes 291-292)

Pages:

381-384

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.291-292.381

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Online since:

August 2005

Authors:

S.H. Hong, H. Isii, Mutsumi Touge, Junji Watanabe

Keywords:

Chemical Mechanical Polishing (CMP), CMP, GaAs, H₂O₂, Photocatalytic, Titania (TiO₂)

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References

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