Development of an Evanescent Light Measurement System for Si Wafer Microdefect Detection

S.  Takahashi; R. Nakajima; Takashi Miyoshi; Yasuhiro Takaya; Kiyoshi Takamasu

doi:10.4028/www.scientific.net/KEM.295-296.15

Paper Titles

Laser Scattering Measurement of Microdefects on Silicon Oxide Wafer
p.3

Characterisation of Surface Properties by a Multi-Function TPM
p.9

Development of an Evanescent Light Measurement System for Si Wafer Microdefect Detection
p.15

An Embedded FBG Sensor for Dynamic Strain Measurement for a Clamped-Clamped Composite Structure
p.21

A Thermovision Method for Studying Deformation Kinetics of Materials and Structure Elements
p.27

Damage Detection of Composite Structures Using Dynamic Analysis
p.33

Investigation of Nonisothermal Crystallization Behaviors of Poly and Silica Nanocomposites Using Differential Scanning Calorimetry
p.39

Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001)
p.45

Temperature Effect on the Stability of CuO Nanofluids Based on Measured Particle Distribution
p.51

HomeKey Engineering MaterialsKey Engineering Materials Vols. 295-296Development of an Evanescent Light Measurement...

Development of an Evanescent Light Measurement System for Si Wafer Microdefect Detection

Abstract:

In order to reduce and control yield loss in the fabrication process of next generation ULSI devices, nano-defects inspection technique for polished Silicon (Si) wafer surface becomes more essential. This paper discusses a new optical nano-defects detection method, which is applicable to silicon wafer surface inspection for next-generation semiconductors. In our proposed method, the evanescent light is emerged on the wafer surface with total internal reflection (TIR) of infrared (IR) laser at the Si-air interface. By scanning the surface where the evanescent light is emerging with a very shaped fiber probe, it enables to detect nanometer scale defects in the vicinity of Si wafer surface without diffraction limit to resolution. To experimentally verify the feasibility of this method, an evanescent light measurement system was developed and several fundamental experiments were performed. The results show that the proposed Si wafer microdefects detection method can detect the microdefect with 10nm scale on and beneath the surface based on evanescent light distribution.

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Periodical:

Key Engineering Materials (Volumes 295-296)

Pages:

15-20

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.295-296.15

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Online since:

October 2005

Authors:

S. Takahashi, R. Nakajima, Takashi Miyoshi, Yasuhiro Takaya, Kiyoshi Takamasu

Keywords:

Evanescent Light, Microdefects, Si Wafer, Surface Inspection

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