Bonding Parameters of Anisotropic Conductive Adhesive Film and Peeling Strength

Abstract:

The effects of different bonding parameters-temperature, pressure, curing time, bonding temperature ramp and post-processing on the adhesive strengths of Anisotropic Conductive Adhesive Film (ACF) interconnection were investigated. The test results showed the adhesive strength increased as the bonding temperature increase. The curing time had great influence on the adhesive strength of ACF joints. The adhesive strengths increased as the bonding pressure increasing, but decreased if the bonding pressure was over 0.25MPa. The effects of different Teflon thickness on the pressure header and post-processing on adhesive strengths performance of ACF joints were studied. It was shown that the 90o peeling strength became deteriorated as the Teflon thickness increase. Different post-processing conditions showed that the specimens kept in 120oC chamber for 30 minutes had the best performance of the ACF interconnection. The environmental experiments of the thermal cycling (-40 - 125oC) and the high temperature/humidity (85oC, 85%RH) aging were used to evaluate the reliability of the specimens with different bonding parameters. It was shown that the high temperature/humidity was the harshest condition to the ACF bonding. The optimum bonding parameters were determined to obtain better peeling strength.

• Periodical: Key Engineering Materials (Volumes 297-300)
• Pages: 918-926
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.297-300.918
• Online since: November 2005
• Authors: Xu Chen, Jun Zhang, Chunlei Jiao, Yan Min Liu
• Keywords: ACF, Adhesive Strength, Anisotropic Conductive Film, Environmental Test, Peeling Strength, Reliability

References

[1] M.J. Yim and K.W. Paik: IEEE Trans Comp. Packag Manuf. Technol, part A Vol. 21 (1998), p.226.

[2] G. Sarkar, S. Mridha and T.T. Chong: J Mater. Proc. Tech. Vol. 90 (1999), p.484.

[3] J. Liu and Z.H. Lai: ASME Trans. J Electro Packag Vol. 124 (2002), p.240.

[4] J.C. Jagt: IEEE Trans Comp. Packag Manuf. Technol, part A Vol. 21 (1998), p.216.

[5] Y.C. Chan and D.Y. Luk: Microelectron Reliab Vol. 42 (2002), p.1185.

[6] Y.C. Chan and D.Y. Luk: Microelectron Reliab Vol. 42 (2002), p.1195.