Enhanced Piezoelectric Properties of Barium Titanate Single Crystals by Domain Engineering

Abstract:

Engineered domain configuration was induced into barium titanate (BaTiO3) single crystals, and the d33 piezoelectricity was investigated as a function of domain size. Prior to the domain engineering, the dependence of domain configuration on the temperature and the electric-field was investigated, and above Curie temperature (Tc), when the electric-field over 16 kV/cm was applied along [111]c direction, the fine engineered domain configuration appeared. On the basis of the above information, the 33 resonators with different domain sizes were successfully prepared. Their piezoelectric measurement revealed that the d33 of the 33 resonators with fine-engineered domain configurations were higher than those of BaTiO3 single-domain crystals. Moreover, d33 increased with decreasing domain sizes. The highest d33 of 289 pC/N was obtained in the BaTiO3 crystal with a domain size of 13μm.

• Periodical: Key Engineering Materials (Volume 301)
• Pages: 23-26
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.301.23
• Online since: January 2006
• Authors: Koichi Yako, Hirofumi Kakemoto, Takaaki Tsurumi, Satoshi Wada
• Keywords: Barium Titanate (BT), d₃₃ Piezoelectricity, Domain Engineering, Engineered Domain, Single Crystal

References

[1] S . -E. Park and T. R. Shrout: Mater. Res. Innov. 1 (1997) 20.

[2] S. -E. Park and T. R. Shrout: J. Appl. Phys. 82 (1997) 1804.

[3] J. Kuwata, K. Uchino and S. Nomura: Ferroelectrics 37 (1981) 579.

[4] J. Kuwata, K. Uchino and S. Nomura: Jpn. J. Appl. Phys. 21 (1982) 1298.

[5] S. Wada, S. -E. Park, L. E. Cross and T. R. Shrout: J. Korean Phys. Soc. 32 (1998) S1290.

[6] S. Wada, S. -E. Park, L. E. Cross and T. R. Shrout: Ferroelectrics 221 (1999) 147.

[7] S. Wada and T. Tsurumi: Mater. Int. 17 (2004) 16 [in Japanese].

[8] S. Wada, H. Kakemoto and T. Tsurumi: Mater. Trans. 45 (2004) 178.

[9] S. Wada and T. Tsurumi: to be published in Br. Ceram. Trans. 103 (2004).

[10] S. Wada, K. Yako, H. Kakemoto, J. Erhart and T. Tsurumi: Key Eng. Mater. (2004) in press.

[11] EMAS-6100: Standard of Electronic Materials Manufacturers Association of Japan (1993).

[12] M. Zgonik, P. Bernasconi, M. Duelli, R. Schlesser, P. Gunter, M. H. Garrett, D. Rytz, Y. Zhu and X. Wu, Phys. Rev. B, 50 (1994) 5941.