Ablated Transformation and Dielectric of SiO2/SiO2 Nanocomposites Dipped with Silicon Resin

Abstract:

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SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1239-1241

DOI:

10.4028/www.scientific.net/KEM.336-338.1239

Citation:

M. S. Cao et al., "Ablated Transformation and Dielectric of SiO2/SiO2 Nanocomposites Dipped with Silicon Resin", Key Engineering Materials, Vols. 336-338, pp. 1239-1241, 2007

Online since:

April 2007

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Price:

$35.00

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