Ablated Transformation and Dielectric of SiO2/SiO2 Nanocomposites Dipped with Silicon Resin

Mao Sheng Cao; Hai Bo Jin; Jin Gang Li; Liang Zhang; Qiang Xu; Xiang Li; Lan Tian Xiong

doi:10.4028/www.scientific.net/KEM.336-338.1239

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338Ablated Transformation and Dielectric of SiO2/SiO2...

Ablated Transformation and Dielectric of SiO₂/SiO₂ Nanocomposites Dipped with Silicon Resin

Abstract:

SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

1239-1241

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.1239

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Online since:

April 2007

Authors:

Mao Sheng Cao, Hai Bo Jin, Jin Gang Li, Liang Zhang, Qiang Xu, Xiang Li, Lan Tian Xiong

Keywords:

Ablation, High Temperature Dielectric Properties, Silicon Dioxide, Transformation

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