Ferroelectric Properties of Bi3.4Y0.6Ti3O12 Thin Films Prepared by a Modified Sol-Gel Process

Hong Cheng Liu; Biao Wang

doi:10.4028/www.scientific.net/KEM.336-338.181

Paper Titles

Fabrication of Bi₃NbTiO₉ Thick Films by Air Flow Deposition
p.165

The Crystalline, Dielectric and Pyroelectric Properties of (1-x)Pb(Sc_0.5Ta_0.5)O₃-xPb(Zr_0.52Ti_0.48)O₃ Relaxor Ferroelectric Ceramics
p.169

Epitaxial Growth and Electrical Characterization of PBZT Thin Films by RF Magnetron Sputtering Deposition
p.173

Microstructure Characteristics in the BaTiO₃-La₂O₃-Nb₂O₅ Ternary System
p.177

Ferroelectric Properties of Bi_3.4Y_0.6Ti₃O₁₂ Thin Films Prepared by a Modified Sol-Gel Process
p.181

Phase Structure and Electrical Properties of Bi_1/2Na_1/2TiO₃-KNbO₃ Lead-Free Piezoelectric Ceramics
p.184

Sintering and Dielectric Properties of Excess Bi₂O₃ Doped BaBi₂Nb₂O₉ Ceramics
p.188

Preparation of Bi-Layered SrBi₂Ta_2-xV_xO₉ Ceramics (0.1 ≦ x ≦ 0.4)
p.192

Microwave Dielectric Properties of Ca[(Li_1/3Nb_2/3)_0.95Zr_0.15]O_3+δ Ceramics with Ba²⁺ Substitution at A-Site
p.196

HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338Ferroelectric Properties of Bi3.4Y0.6Ti3O12 Thin...

Ferroelectric Properties of Bi_3.4Y_0.6Ti₃O₁₂ Thin Films Prepared by a Modified Sol-Gel Process

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Key Engineering Materials (Volumes 336-338)

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181-183

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https://doi.org/10.4028/www.scientific.net/KEM.336-338.181

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April 2007

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Hong Cheng Liu, Biao Wang

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Ferroelectric, Layered Perovskite, Sol-Gel (SG)

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