The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering
Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid thermal annealing (RTA) exhibit much thinner BST/Pt interfacial transition layer and higher dielectric properties than the films crystallized by conventional thermal annealing (CTA). HRTEM observations show that the transition layer is 2-3nm thick for RTA and 4-5nm thick for CTA. XPS investigations display that the transition layer is composed of perovskited BST phase and non-perovskited BST phase, and RTA corresponds to much less non-perovskited BST phase than CTA. The reason for non-perovskited BST phase and the dielectric properties of BST films are also presented.
Wei Pan and Jianghong Gong
J. X. Liao, C.R. Yang, J.H. Zhang, H. Chen, C.L. Fu, W.J. Leng, "The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering", Key Engineering Materials, Vols. 336-338, pp. 374-376, 2007