Reliability of Ba(Zr0.1Ti0.9)O3 Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application

Kai Huang Chen; Chien Chuan Cheng; Ying Chung Chen; Ting Chang Chang

doi:10.4028/www.scientific.net/KEM.336-338.73

Paper Titles

Investigation of Field-Induced Piezoelectric Properties in Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Ceramics for Transducer Applications
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Low Temperature Sintering (Ba_1-xSr_x)TiO₃ Ceramics by Using CuO-TiO₂ Mixture as Sintering Aid
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Preparation of Plank-Like BaTiO₃ by Hydrothermal Soft Chemical Process from Layered Titanate Precursors
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Preferred Orientation Growth of Ba_0.6Sr_0.4TiO₃ Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate
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Reliability of Ba(Zr_0.1Ti_0.9)O₃ Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application
p.73

Preparation and Characterization of Citrate Sol-Gel Derived Ba(Zr,Ti)O₃ Ceramics with Al₂O₃ Addition
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Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films
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The Effect of Different Doping Methods of Sintering Aids on the Barium Titanate Based X7R Ceramics
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Preparation of Ferroelectric BaTiO₃ Films by Electrophoretic Deposition Technique
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338Reliability of Ba(Zr0.1Ti0.9)O3 Ferroelectric Thin...

Reliability of Ba(Zr_0.1Ti_0.9)O₃ Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application

Abstract:

In this study, ferroelectric thin films of Ba(Zr0.1Ti0.9)O3 were successfully deposited on Pt/Ti/SiO2/Si substrate under the optimal rf magnetron sputtering parameters, and their electrical and ferroelectric characteristics were investigated. The MFMIS structure of Al/Ba(Zr0.1Ti0.9)O3/ Pt/Ti/SiO2/Si was proposed in order to be applied as NDRO FRAM applications. From the experimental results obtained, the dielectric constant and the leakage current density of BZT films were about 200 and 1×10-9A/cm2, respectively, under the electrical field of 1 MV/cm. Besides, the saturation polarization and coercive field of Ba(Zr0.1Ti0.9)O3 films were found to be 4 μC/cm2 and 25 kV/cm, respectively, as the frequency of 103 Hz was applied. The variations of saturation polarization and coercive filed of films under various frequencies ranging form 102 to 106 Hz were also discussed.

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Key Engineering Materials (Volumes 336-338)

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73-75

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https://doi.org/10.4028/www.scientific.net/KEM.336-338.73

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Online since:

April 2007

Authors:

Kai Huang Chen, Chien Chuan Cheng, Ying Chung Chen, Ting Chang Chang

Keywords:

BZT, Coercive Field, Dielectric Constant, Leakage Current Density, P-E, Remnant Polarization, RF Sputtering

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