Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

Ke Jia Li; Xia Xiao; Yu Feng Jin

doi:10.4028/www.scientific.net/KEM.353-358.2920

Paper Titles

Thermal Stress Analysis of MCM Package Using Diamond Material
p.2904

Torsional Fatigue of 63Sn-37Pb and Sn-0.7Cu Solders
p.2908

Research on Creep Properties of Sn2.5Ag0.7CuXRE Lead-Free Soldered Joints for Surface Mount Technology
p.2912

In Situ Thermal-Mechanical Fatigue Testing of Thin Au Lines
p.2916

Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films
p.2920

Micro/Nano Film Getters for Vacuum Maintenance of MEMS
p.2924

Isothermal Aging Effects on the Microstructure, IMC and Strength of SnAgCu/Cu Solder Joint
p.2928

A Comparative Study of the Solder Joint Reliability in Flip Chip Assemblies with Compliant and Rigid Substrates
p.2932

Behavior of Anisotropic Conductive Joints under Hygrothermal Conditions
p.2936

HomeKey Engineering MaterialsKey Engineering Materials Vols. 353-358Theoretical Analysis of Young’s Modulus and...

Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

Abstract:

Porous silicon dioxide films featuring low dielectric constant are of great scientific and commercial interest because of their outstanding potential for application to microelectronic interconnect. However, some reliability problems arise in porous SiO2 films due to their poor mechanical performance. Therefore, it is very important to understand the mechanical and electrical properties of porous SiO2 films. New 2-D models with circle pores and 3-D models with cubic pores are proposed in this work. Simulated results of porous SiO2 structures in the case of periodic and random arrangement, which are implemented through ANSYS, are also provided. Critical parameters such as Young’s modulus E and dielectric constant k of porous films are investigated. Calculation results show that dielectric constant reaches as low as 2.5 when porosity of films is about 40%, while E keeps over 3 GPa if porosity remains in the range from 30% to 40%.

You might also be interested in these eBooks

Progresses in Fracture and Strength of Materials and Structures

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 353-358)

Pages:

2920-2923

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.353-358.2920

Citation:

Cite this paper

Online since:

September 2007

Authors:

Ke Jia Li, Xia Xiao, Yu Feng Jin

Keywords:

Interconnect, Low-k Dielectric Constant, Porous Silicon Dioxide, Young's Modulus

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] The International Technology Roadmap for Semiconductors 2003 edition (interconnect section).

Google Scholar

[2] The International Technology Roadmap for Semiconductors 2005 edition (interconnect section).

Google Scholar

[3] H. Miyoshi, H. Masrsuo, Y. Oku, et al.: Interconnect Technology Conference 2003, Proceedings of the IEEE International, 2-4 June 2003, pp.57-59.

Google Scholar

[4] H. Miyoshi, H. Masrsuo, Y. Oku, et al.: Jpn. J. Appl. Phys. Vol. 43 (2004), pp.498-503.

Google Scholar

[5] C.M. flannery: Ultrasonics Symposium Vol. 1 (2001), pp.471-474.

Google Scholar

[6] C.M. flannery, C. Murray, I. Streiter, et al.: Thin Solid Films Vol. 388 (2001), pp.1-4.

Google Scholar

[7] L.W. Hrubesh, L.E. Keene and V.R. Latorre, J: Mater. Res. Vol. 8 No. 7 (1993), p.1736.

Google Scholar

[8] Xia Xiao, Reinhard Streiter and Gang Ruan: Microelectro. Eng. Vol. 54 (2000), pp.295-230.

Google Scholar