Microwave Characteristics of ZnO-Doped CeO2 Dielectric Resonators

Cheng Hsing Hsu; Hsin Han Tung; Chun Hung Lai; Man Hsiang Chung

doi:10.4028/www.scientific.net/KEM.368-372.188

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Microwave Characteristics of ZnO-Doped CeO2...

Microwave Characteristics of ZnO-Doped CeO₂ Dielectric Resonators

Abstract:

CeO2 ceramics with ZnO additions (1 and 2 wt%) were prepared with conventional solid-state route have been investigated. Doping with ZnO (up to 1 wt%) can effectively promote the densification of CeO2 ceramics at low sintering temperature. At 1550 oC, CeO2 ceramics with 1 wt% ZnO addition possesses a dielectric constant ( ε r) of 23.2, a Q×f value of 53000 GHz and a temperature coefficient of resonant frequency (τf) of –47 ppm/oC.

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Key Engineering Materials (Volumes 368-372)

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188-191

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https://doi.org/10.4028/www.scientific.net/KEM.368-372.188

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February 2008

Authors:

Cheng Hsing Hsu, Hsin Han Tung, Chun Hung Lai, Man Hsiang Chung

Keywords:

CeO₂ Ceramics, Liquid Phase, Microwave Dielectric Properties

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