Microwave Characteristics of ZnO-Doped CeO2 Dielectric Resonators

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CeO2 ceramics with ZnO additions (1 and 2 wt%) were prepared with conventional solid-state route have been investigated. Doping with ZnO (up to 1 wt%) can effectively promote the densification of CeO2 ceramics at low sintering temperature. At 1550 oC, CeO2 ceramics with 1 wt% ZnO addition possesses a dielectric constant ( ε r) of 23.2, a Q×f value of 53000 GHz and a temperature coefficient of resonant frequency (τf) of –47 ppm/oC.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

188-191

Citation:

C. H. Hsu et al., "Microwave Characteristics of ZnO-Doped CeO2 Dielectric Resonators", Key Engineering Materials, Vols. 368-372, pp. 188-191, 2008

Online since:

February 2008

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$38.00

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