Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

B.L. Wang; Han Huang; Jin Zou; Li Bo Zhou

doi:10.4028/www.scientific.net/KEM.381-382.525

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 381-382Nanomechanical Properties and Nanostructure of CMG...

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

Abstract:

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

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Periodical:

Key Engineering Materials (Volumes 381-382)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.381-382.525

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Online since:

June 2008

Authors:

B.L. Wang, Han Huang, Jin Zou, Li Bo Zhou

Keywords:

Acoustic Emission (AE), Chemo-Mechanical Grinding (CMG), Grinding, Nanoindentation, Silicon

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