Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon

Abstract:

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The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).

Info:

Periodical:

Key Engineering Materials (Volumes 381-382)

Edited by:

Wei Gao, Yasuhiro Takaya, Yongsheng Gao and Michael Krystek

Pages:

529-532

DOI:

10.4028/www.scientific.net/KEM.381-382.529

Citation:

N.I. Plusnin et al., "Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon", Key Engineering Materials, Vols. 381-382, pp. 529-532, 2008

Online since:

June 2008

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Price:

$35.00

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