Patterning of HfO₂ Thin Films Using Chemical Solution and Dielectric Properties

Abstract:

HfO2 precursor solutions were prepared by modification of alkoxide for patterning of HfO2 films. The HfO2 dots were patterned on Si substrate by inkjet printing method. The electrical properties of HfO2 films prepared by inkjet printing method were almost same as the properties of the HfO2 films prepared by spin-coating method. Additionally, the HfO2 nanostructures were successfully patterned by nanoimprint method using the chemically-modified alkoxy-derived precursor solution.

• Periodical: Key Engineering Materials (Volume 388)
• Pages: 141-144
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.388.141
• Online since: September 2008
• Authors: Kazuyuki Suzuki, Kazumi Kato
• Keywords: Dielectric Property, Film, HfO₂, Patterning, Precursor Solution

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