Patterning of HfO2 Thin Films Using Chemical Solution and Dielectric Properties

Abstract:

Article Preview

HfO2 precursor solutions were prepared by modification of alkoxide for patterning of HfO2 films. The HfO2 dots were patterned on Si substrate by inkjet printing method. The electrical properties of HfO2 films prepared by inkjet printing method were almost same as the properties of the HfO2 films prepared by spin-coating method. Additionally, the HfO2 nanostructures were successfully patterned by nanoimprint method using the chemically-modified alkoxy-derived precursor solution.

Info:

Periodical:

Edited by:

Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

141-144

DOI:

10.4028/www.scientific.net/KEM.388.141

Citation:

K. Suzuki and K. Kato, "Patterning of HfO2 Thin Films Using Chemical Solution and Dielectric Properties", Key Engineering Materials, Vol. 388, pp. 141-144, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.