Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering

Shigeru Tanaka; Yukari Ishikawa; Toshiyuki Suzuki; Noriyoshi Shibata

doi:10.4028/www.scientific.net/KEM.388.19

Paper Titles

(Mg,Zn)O/ZnO Heterostructures Prepared by Pulsed Laser Deposition
p.3

Effect of Annealing on Electrical Degradation Characteristics of ZnO Varistors
p.7

Study on Recovery of Electrical Degradation of ZnO Varistors
p.11

Electrical Degradation Caused by Electro-Static Discharge Pulse in ZnO-Based Multilayer Varistor
p.15

Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering
p.19

Impurity Contamination and Diffusion during Annealing in Implanted ZnO
p.23

Synthesis of Well-Aligned ZnO Nanowhisker Films Using Aqueous Solution for Use in Dye-Sensitized Sensor
p.27

High-Rate Charge-Discharge Performance of Composite Electrodes of FeOOH-Based Amorphous Particles and Carbon Powder
p.33

Fabrication of Titanate Thin Film by Electrophoretic Deposition of Tetratitanate Nanosheets for Electrodes of Li-Ion Battery
p.37

HomeKey Engineering MaterialsKey Engineering Materials Vol. 388Photoluminescence from ZnO Thin Film Deposited on...

Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering

Abstract:

Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low temperature. Some experimental results suggest that NBE depends on the polarization of the excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire substrate.