Impurity Contamination and Diffusion during Annealing in Implanted ZnO

Abstract:

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The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.

Info:

Periodical:

Edited by:

Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

23-26

DOI:

10.4028/www.scientific.net/KEM.388.23

Citation:

I. Sakaguchi et al., "Impurity Contamination and Diffusion during Annealing in Implanted ZnO", Key Engineering Materials, Vol. 388, pp. 23-26, 2009

Online since:

September 2008

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Price:

$35.00

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