Impurity Contamination and Diffusion during Annealing in Implanted ZnO

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The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.

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23-26

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September 2008

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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[1] V. Srikant, D.R. Clark, J. Appl. Phys., 83 (1998), p.5447.

Google Scholar

[2] K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, T. Tanabe, and H. Takasu, J. Crystal Growth, 214/215 (2000), p.50.

DOI: 10.1016/s0022-0248(00)00057-9

Google Scholar

[3] R.D. Vispute, V. Talyansky, S. Choopun, R.P. Sharma, T. Venkatesan, M. He, X. Tang, J.B. Halpern, M.G. Spencer, Y.X. Li, L.G. Salamanca-Riba, and A.A. Iliadis, K.A. Jones, Appl. Phys. Lett., 73 (1998), p.348.

DOI: 10.1063/1.121830

Google Scholar

[4] J.F. Muth, R.M. Kolbas, A.K. Sharma, and S. Oktyabrsky, J. Appl. Phys., 85 (1999), p.7884.

Google Scholar

[5] E. V. Wong, P.C. Searson, Appl. Phys. Lett., 74 (1999), p.2939.

Google Scholar

[6] I. Sakaguchi, H. Yurimoto, and S. Sueno, J. Am. Ceram. Soc., 75 (1992), p.712.

Google Scholar

[7] J.J. Lander, J. Phys. Chem. Sol., 15 (1960), p.325.

Google Scholar

[8] H. Helbig and B. Jahnel, Verh. Dt. Phys. Ges., 5 (1970), p.321.

Google Scholar