Optical and Structural Analysis of GeC Thin Films Deposited by Reactive Pulsed Laser Ablation Technique

H.Z. Shafi; A. Mahmood; Z. Ali; M. Mehmood

doi:10.4028/www.scientific.net/KEM.442.178

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 442Optical and Structural Analysis of GeC Thin Films...

Optical and Structural Analysis of GeC Thin Films Deposited by Reactive Pulsed Laser Ablation Technique

Abstract:

GeC thin films have been prepared by reactive pulsed laser ablation technique. Methane pressure (PCH4) was varied from 0 to 75 milli torrs (mT). Optical analysis of all the samples was performed by spectroscopic ellipsometry (SE). The optical constants i.e. refractive index (n), extinction coefficient (k), absorption coefficient (α) and thickness of deposited film(s) were obtained by modeling and simulations of ellipsometric data. It was found that deposition parameter (change in pressure of methane) has a profound effect on the properties of the deposited films. To support our results of optical analysis, other important diagnostic techniques like atomic force microscopy (AFM), Fourier Transform Infrared Spectroscopy (FTIR) etc. were employed.

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Key Engineering Materials (Volume 442)

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178-186

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.442.178

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June 2010

Authors:

H.Z. Shafi, A. Mahmood, Z. Ali, M. Mehmood

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Atomic Force Microscope (AFM), FT-IR, Germanium Carbide, Reactive Pulsed Laser Ablation, Spectroscopic Ellipsometry (SE)

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