Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

Akihisa Kubota; Masahiko Yoshimura; Takashi Watayo; Yoshitaka Nakanishi; Mutsumi Touge

doi:10.4028/www.scientific.net/KEM.447-448.146

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Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 447-448Advanced Lapping and Polishing Methods for...

Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

Abstract:

We have developed advanced lapping and polishing methods for silicon carbide (SiC) substrates using an Fe abrasive particles and hydrogen peroxide (H2O2) solution. In this method, a SiC surface is oxidized by hydroxyl radicals (OH*), which was generated by Fe catalyst reactions, and the oxide layer on the SiC is mechanically and/or chemically removed by Fe abrasive particles and solution　[1-4]. In this study, we applied this planarization method for lapping and polishing SiC surface, in which catalytically generated hydroxyl radicals were utilized to oxidize the surface of a SiC wafer. The processed surfaces were observed by optical interferometric microscope, Nomarski differential interference contrast. These observations showed that surface roughness and flatness of a SiC substrate were markedly improved and scratch-free SiC surface was obtained. These results provide useful information for preparing a high-efficiency and high-accuracy SiC substrate.

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Periodical:

Key Engineering Materials (Volumes 447-448)

Pages:

146-149

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.447-448.146

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Online since:

September 2010

Authors:

Akihisa Kubota, Masahiko Yoshimura, Takashi Watayo, Yoshitaka Nakanishi, Mutsumi Touge

Keywords:

Hydroxyl Radical (OH*), Lapping, Polishing, Silicon Carbide (SiC)

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References

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