Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

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We have developed advanced lapping and polishing methods for silicon carbide (SiC) substrates using an Fe abrasive particles and hydrogen peroxide (H2O2) solution. In this method, a SiC surface is oxidized by hydroxyl radicals (OH*), which was generated by Fe catalyst reactions, and the oxide layer on the SiC is mechanically and/or chemically removed by Fe abrasive particles and solution [1-4]. In this study, we applied this planarization method for lapping and polishing SiC surface, in which catalytically generated hydroxyl radicals were utilized to oxidize the surface of a SiC wafer. The processed surfaces were observed by optical interferometric microscope, Nomarski differential interference contrast. These observations showed that surface roughness and flatness of a SiC substrate were markedly improved and scratch-free SiC surface was obtained. These results provide useful information for preparing a high-efficiency and high-accuracy SiC substrate.

Info:

Periodical:

Key Engineering Materials (Volumes 447-448)

Edited by:

Jianhong Zhao, Masanori Kunieda, Guilin Yang and Xue-Ming Yuan

Pages:

146-149

Citation:

A. Kubota et al., "Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles", Key Engineering Materials, Vols. 447-448, pp. 146-149, 2010

Online since:

September 2010

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$38.00

[1] Akihisa Kubota, Keita Yagi, Junji Murata, Heiji Yasui, Shiro Miyamoto, Hideyuki Hara, Yasuhisa Sano and Kazuto Yamauchi: Journal of Electronic Materials, 38, (2009), 159-163.

DOI: https://doi.org/10.1007/s11664-008-0583-4

[2] Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Takeshi Okamoto, Kenta Arima, Hidekazu Mimura, and Kazuto Yamauchi: Surface and Interface Analysis 40 (6-7), 2008, pp.998-1001.

DOI: https://doi.org/10.1002/sia.2804

[3] Junji Murata, Akihisa Kubota, Keita Yagi, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, T. Okamotoa, Hidekazu Mimura and Kazuto Yamauchi: Journal of Crystal Growth 310 (7-9), 2008, pp.1637-1641.

DOI: https://doi.org/10.4028/www.scientific.net/msf.556-557.749

[4] Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Takeshi Okamoto, Hidekazu Mimura, and Kazuto Yamauchi: Japanese Journal of Applied Physics, Vol. 47, No. 1, 2008, pp.104-107.

DOI: https://doi.org/10.1143/jjap.47.104

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