Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles

Abstract:

Article Preview

We have developed advanced lapping and polishing methods for silicon carbide (SiC) substrates using an Fe abrasive particles and hydrogen peroxide (H2O2) solution. In this method, a SiC surface is oxidized by hydroxyl radicals (OH*), which was generated by Fe catalyst reactions, and the oxide layer on the SiC is mechanically and/or chemically removed by Fe abrasive particles and solution [1-4]. In this study, we applied this planarization method for lapping and polishing SiC surface, in which catalytically generated hydroxyl radicals were utilized to oxidize the surface of a SiC wafer. The processed surfaces were observed by optical interferometric microscope, Nomarski differential interference contrast. These observations showed that surface roughness and flatness of a SiC substrate were markedly improved and scratch-free SiC surface was obtained. These results provide useful information for preparing a high-efficiency and high-accuracy SiC substrate.

Info:

Periodical:

Key Engineering Materials (Volumes 447-448)

Edited by:

Jianhong Zhao, Masanori Kunieda, Guilin Yang and Xue-Ming Yuan

Pages:

146-149

DOI:

10.4028/www.scientific.net/KEM.447-448.146

Citation:

A. Kubota et al., "Advanced Lapping and Polishing Methods for Planarizing a Single-Crystal 4H-Sic Utilizing Fe Abrasive Particles", Key Engineering Materials, Vols. 447-448, pp. 146-149, 2010

Online since:

September 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.