Simple Nanoimprint Lithography with 50 nm Resolution Using Vacuum Packing

Kazuo Itoh; Hirokazu Hirai; Tetsuya Ando; Kazuya Takagi; Katsuya Noguchi

doi:10.4028/www.scientific.net/KEM.459.111

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 459Simple Nanoimprint Lithography with 50 nm...

Simple Nanoimprint Lithography with 50 nm Resolution Using Vacuum Packing

Abstract:

We demonstrated a simple UV nanoimprint method using vacuum packing. A glass substrate and a Si mold dropped with a photo-curable resist were vacuum-packed together in a packing sheet. They were pressed by atmospheric pressure and easily fixed without a complicated apparatus. We obtained a successful nanoimprint result for 100 nm width lines with high aspect ratio of 3.2. Further fine pattern of about 50 nm line width was also replicated using our simple method. The remaining thickness of the resist after imprint decreased with increasing the pressing pressure　whereas it saturated due to the viscosity of the resist. This saturation tendency is well explained by the balance between the pressing force and the viscous force of the resist.

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Periodical:

Key Engineering Materials (Volume 459)

Pages:

111-115

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.459.111

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Online since:

December 2010

Authors:

Kazuo Itoh, Hirokazu Hirai, Tetsuya Ando, Kazuya Takagi, Katsuya Noguchi

Keywords:

Photo-Curable Resist, Resist Viscosity, Si Mold, Simple Nanoimprint, Vacuum Packing

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References

[1] S. Y. Chou, P. R. Krauss and P. J. Renstrom: Appl. Phys. Lett. Vol. 67 (1995) , p.3114.

Google Scholar

[2] J. Haisma, M. Verheijen, K. van den Heuvel and J. van den Berg: J. Vac. Sci. Technol. Vol. B14 (1996), p.4124.

Google Scholar

[3] M. D. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S. A. Lyon and S. Y. Chou: Appl. Phys. Lett. Vol. 84 (2004), p.5299.

Google Scholar

[4] T. Bailey, B. J. Choi, M. Colburn, M. Meissl, S. Shaya, J. G. Ekerdt, S. V. Sreenivasan and C. G. Willson: J. Vac. Sci. Technol. Vol. B18 (2000), p.3572.

DOI: 10.1116/1.1324618

Google Scholar

[5] M. Komuro, J. Taniguchi, S. Inoue, N. Kimura, Y. Takano, H. Hiroshima and S. Matsui: Jpn. J. Appl. Phys. Vol. 39 (2000), p.7075.

Google Scholar

[6] H. Hiroshima, S. Inoue, N. Kasahara, J. Taniguchi, I. Miyamoto and M. Komuro: Jpn. J. Appl. Phys. Vol. 41 (2002), p.4173.

Google Scholar

[7] H. Hiroshima, M. Komuro, N. Kasahara, Y. Kurashima and J. Taniguchi: Jpn. J. Appl. Phys. Vol. 42 (2003), p.3849.

Google Scholar

[8] S. H. Kim, H. Hiroshima, S. Inoue, Y. Kurashima and M. Komuro: Jpn. J. Appl. Phys. Vol. 43 (2004), p.4022.

Google Scholar