Simple Nanoimprint Lithography with 50 nm Resolution Using Vacuum Packing
We demonstrated a simple UV nanoimprint method using vacuum packing. A glass substrate and a Si mold dropped with a photo-curable resist were vacuum-packed together in a packing sheet. They were pressed by atmospheric pressure and easily fixed without a complicated apparatus. We obtained a successful nanoimprint result for 100 nm width lines with high aspect ratio of 3.2. Further fine pattern of about 50 nm line width was also replicated using our simple method. The remaining thickness of the resist after imprint decreased with increasing the pressing pressure whereas it saturated due to the viscosity of the resist. This saturation tendency is well explained by the balance between the pressing force and the viscous force of the resist.
Osamu Hanaizumi and Masafumi Unno
K. Itoh et al., "Simple Nanoimprint Lithography with 50 nm Resolution Using Vacuum Packing", Key Engineering Materials, Vol. 459, pp. 111-115, 2011