Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory

Abstract:

Reliability (or stability) of multi-level storage (MLS) is the critical characteristics for multi-level cells. In order to improve reliability of MLS of phase-change memory, there are two effective approaches, (i) enlargement of the ratio between resistance levels and (ii) reduction of scattering of resistance level. On the basis of our experimental results, it is demonstrated that the Ge₂Sb₂Te₅-based double-layered cell has a high ratio of highest to lowest levels up to two-to-three orders of magnitude, implying high reliability. The cells exhibit the possibility of stable switching for four-level storage.

• Periodical: Key Engineering Materials (Volume 459)
• Pages: 140-144
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.459.140
• Online since: December 2010
• Authors: You Yin, Tomoyuki Noguchi, Hiroki Ohno, Sumio Hosaka
• Keywords: Double Layered, Lateral, Multilevel Storage, Phase Change Memory (PCM), Reliability

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