Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory

Abstract:

Article Preview

Reliability (or stability) of multi-level storage (MLS) is the critical characteristics for multi-level cells. In order to improve reliability of MLS of phase-change memory, there are two effective approaches, (i) enlargement of the ratio between resistance levels and (ii) reduction of scattering of resistance level. On the basis of our experimental results, it is demonstrated that the Ge2Sb2Te5-based double-layered cell has a high ratio of highest to lowest levels up to two-to-three orders of magnitude, implying high reliability. The cells exhibit the possibility of stable switching for four-level storage.

Info:

Periodical:

Edited by:

Osamu Hanaizumi and Masafumi Unno

Pages:

140-144

DOI:

10.4028/www.scientific.net/KEM.459.140

Citation:

Y. Yin et al., "Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory", Key Engineering Materials, Vol. 459, pp. 140-144, 2011

Online since:

December 2010

Export:

Price:

$35.00

[1] S. Lai: Tech. Dig. IEDM, 2003, p.255.

[2] Y. Yin, D. Niida, K. Ota, H. Sone and S. Hosaka: Rev. Sci. Instrum. Vol. 78 (2007), p.126101.

[3] D. Ielmini: Microelectron. Eng. Vol. 86 (2009), p.1870.

[4] Y. Hamada, T. Kijima, H. Miyazawa and T. Shimoda: Jpn. J. Appl. Phys. Vol. 44 (2005), p.6895.

[5] N. Menou, H. Kuwabara and H. Funakubo: Jpn. J. Appl. Phys. Vol. 46 (2007), p.2139.

[6] H. Miyatake, T. Sunaga, H. Umezaki and H. Asano: IEEE Trans. Magn. Vol. 40 (2004), p.1723.

[7] D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki and K. Ando: Appl. Phys. Lett. Vol. 86 (2005), p.092502.

DOI: 10.1063/1.1871344

[8] K. Nakayama, K. Kojima, F. Hayakawa, Y. Imai, A. Kitagawa and M. Suzuki: Jpn. J. Appl. Phys. Vol. 39 (2000) , p.6157.

[9] Y. Yin, H. Sone and S. Hosaka: Microelectron. Eng. Vol. 84 (2007), p.2901.

[10] F. Rao, Z. Song, M. Zhong, L. Wu, G. Feng, B. Liu, S. Feng and B. Chen: Jpn. J. Appl. Phys. Vol. 46 (2007) , p. L25.

[11] D. H. Kang, D. H. Ahn, K. B. Kim, J. F. Webb and K. W. Yi: J. Appl. Phys. Vol. 94 (2003), p.3536.

[12] Y. Yin, H. Sone and S. Hosaka: Jpn. J. Appl. Phys. Vol. 45 (2006), p.8600.

[13] Y. Yin, H. Sone and S. Hosaka: J. Appl. Phys. Vol. 102 (2007), p.064503.

[14] F. Rao, Z. Song, L. Wu, Y. Gong, S. Feng and B. Chen: Solid-State Electronics, Vol. 53 (2009), p.276.

[15] R. Waser and M. Aono: Nat. Mater. Vol. 6 (2007), p.833.

[16] S. Baek, D. Lee, J. Kim, S. Hong, O. Kim and M. Ree: Adv. Funct. Mater. Vol. 17 (2007), p.2637.

[17] Y. Yin, N. Higano, H. Sone and S. Hosaka: Appl. Phys. Lett. Vol. 92 (2008), p.163509.

[18] I. Friedrish, V. Weidenhof, W. Njoroge, P. Franz and M. Wuttig: J. Appl. Phys. Vol. 87 (2000), p.4130.

[19] Y. Yin, T. Noguchi, H. Ohno and S. Hosaka: Appl. Phys. Lett. Vol. 95 (2009), p.133503.

[20] M. Terao, T. Morikawa and T. Ohta: Jpn. J. Appl. Phys. Vol. 48 (2009), p.080001.

In order to see related information, you need to Login.