ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes

Hong Yu Ma; En Jie Ding; Zeng Liang Shi

doi:10.4028/www.scientific.net/KEM.480-481.605

Paper Titles

Turbulence Flow Analysis of Low Temperature Propellant Flowing through Pipes of Filling System
p.585

Research on Airborne Blue-Green Laser Anti-Submarine Technology
p.590

Effect of Solution Treatment on Hardness and Wear Properties of Nanometric Al₂O₃ Particulate Reinforced Al Alloy Matrix Composites Manufactured by Casting
p.595

Characteristics Analysis of Angular Contact Ball Bearing Based on the Oil Film Stiffness¹
p.599

ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes
p.605

Determination of Three Kinds of Volatile Residue of Ozone-Depleting Substances in Polyurethane Foam by Gas Chromatography
p.609

A Novel Interactive 3D Display Based on Half-Silvered Mirror
p.614

Volumes Constrained Layout Optimization of a Continuum with Multiple Materials
p.619

Synthesis, Film Morphology and Performance of a Functional Polysiloxane Containing Polyether, Epoxy and Trifluoropropyl Side Groups
p.624

HomeKey Engineering MaterialsKey Engineering Materials Vols. 480-481ZnO Field-Effect Transistor Fabricated by RF...

ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes

Abstract:

The fabrication of zinc oxide （ZnO）based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and low-cost technique could be applicable to electronic devices.