ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes

Abstract:

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The fabrication of zinc oxide (ZnO)based thin-film field-effect transistors (TFTs) on p-Si substrates by rf magnetron sputtering, photolithography and wet etching processes was presented. Bottom-gate-type thin film transistors using ZnO as an active channel layer were constructed, and their properties were characterized by atomic force microscope, X-ray diffraction and I-V measurements. The fabricated ZnO transistors exhibited enhancement mode characteristics with the on-to-off current ratio of ∼105 and the threshold voltage of 10V. It is believed that the ZnO TFTs fabricatd by the simple and low-cost technique could be applicable to electronic devices.

Info:

Periodical:

Key Engineering Materials (Volumes 480-481)

Edited by:

Yanwen Wu

Pages:

605-608

DOI:

10.4028/www.scientific.net/KEM.480-481.605

Citation:

H. Y. Ma et al., "ZnO Field-Effect Transistor Fabricated by RF Magnetron Suputtering and Lithographic/Wet Etching Processes", Key Engineering Materials, Vols. 480-481, pp. 605-608, 2011

Online since:

June 2011

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Price:

$35.00

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