The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance

Ting Liang; Jian Jun Tang; Qian Qian Zhang; Yong Wang; Jing Li; Jun Liu; Ji Jun Xiong

doi:10.4028/www.scientific.net/KEM.483.174

Paper Titles

Design and Fabrication of a Piezoelectric Sensor for Weighing in Motion
p.154

Simulation and Design on Structure for Experimental Verification of Dielectric Charging of Millimeter-Wave MEMS Switches
p.158

A Miniature Fluxgate Sensor with CMOS Interface Circuitry
p.164

A Z-Axis Decoupled Micromachined Gyroscope with Dual Frames
p.169

The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance
p.174

Temperature Characteristic of Platinum Piezoresistive Pressure Sensor
p.180

Design and Simulation of Electromagnetic Two-Dimensional MOEMS Scanning Mirror
p.185

Micro Magnetic Field Sensor Based On Terfenol-D/PZT/Terfenol-D Magnetoelectric Composites
p.190

Design of the Resonance Tracking System for a Resonant Accelerometer Based on Electrostatic Stiffness
p.195

HomeKey Engineering MaterialsKey Engineering Materials Vol. 483The Design of AlGaN/GaN HEFT-Micro-Accelerometer...

The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance

Abstract:

In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.

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Periodical:

Key Engineering Materials (Volume 483)

Pages:

174-179

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.483.174

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Online since:

June 2011

Authors:

Ting Liang, Jian Jun Tang, Qian Qian Zhang, Yong Wang, Jing Li, Jun Liu, Ji Jun Xiong

Keywords:

Gallium Nitride (GaN), Gravity, HEFT, I-V Characteristics, Temperature Dependence

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