The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance

Abstract:

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In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.

Info:

Periodical:

Edited by:

Xiaohao Wang

Pages:

174-179

DOI:

10.4028/www.scientific.net/KEM.483.174

Citation:

T. Liang et al., "The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance", Key Engineering Materials, Vol. 483, pp. 174-179, 2011

Online since:

June 2011

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Price:

$35.00

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