Lateral RF MEMS Switch Based on Surface Micromachining Process

Abstract:

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In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.

Info:

Periodical:

Edited by:

Xiaohao Wang

Pages:

457-460

DOI:

10.4028/www.scientific.net/KEM.483.457

Citation:

G. P. Du et al., "Lateral RF MEMS Switch Based on Surface Micromachining Process", Key Engineering Materials, Vol. 483, pp. 457-460, 2011

Online since:

June 2011

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Price:

$35.00

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