Lateral RF MEMS Switch Based on Surface Micromachining Process

Guo Ping Du; Jian Zhu; Yuan Wei Yu; Shi Xing Jia; Li Li Jiang

doi:10.4028/www.scientific.net/KEM.483.457

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 483Lateral RF MEMS Switch Based on Surface...

Lateral RF MEMS Switch Based on Surface Micromachining Process

Abstract:

In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.

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Periodical:

Key Engineering Materials (Volume 483)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.483.457

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Online since:

June 2011

Authors:

Guo Ping Du, Jian Zhu, Yuan Wei Yu, Shi Xing Jia, Li Li Jiang

Keywords:

Lateral Contact, RF MEMS, Switch

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References

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