Molecular Dynamic Simulations of Contact Thermal Resistance between Two Individual Silicon Nanowires

Abstract:

Contact thermal resistance between two individual silicon nanowires is investigated by nonequilibrium molecular dynamic simulations as a function of temperature, overlap, bonding strength and spacing between them. The results indicate that contact thermal resistance per unit area increases with temperature increasing. The increasing overlap leads to the increase of the contact areas, which enhances the per unit area contact thermal resistance. With a weakened interfacial van der Waals bonding strength, the contact thermal resistance per unit area increases significantly. Additionally, a method to verify the effect of the bonding strength is used by changing the interfacial spacing, and a reasonable result is observed.

• Periodical: Key Engineering Materials (Volume 483)
• Pages: 663-667
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.483.663
• Online since: June 2011
• Authors: Jian Giang Wang, Ke Dong Bi, Yun Fei Chen
• Keywords: Bonding Strength, Contact Thermal Resistance, Molecular Dynamic (MD), Silicon Nanowire

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