Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature

Yuki Mizutani; Junichi Kimura; Itaru Takuwa; Tomoaki Yamada; Hiroshi Funakubo; Hiroshi Uchida

doi:10.4028/www.scientific.net/KEM.485.191

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 485Dielectric Properties of Bismuth Layer-Structured...

Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature

Abstract:

Thin films of MBi₄Ti₄O₁₅ (M = Ca and Sr) with preferential crystal orientation were fabricated using underneath perovskite layers on various substrates. One-axis BLSD films on (100)LaNiO₃/(111)Pt/Ti/(100)Si and epitaxial BLSD films on (100)SrRuO₃//(100)SrTiO₃ were fabricated by chemical solution deposition (CSD). Dielectric constants of the CaBi₄Ti₄O₁₅ and SrBi₄Ti₄O₁₅ films on (100)LaNiO₃/(111)Pt/Ti/(100)Si were approximately 250, while those on (100)SrRuO₃//(100)SrTiO₃ were 220, respectively. The temperature coefficients of capacitance (TCCs) of these films were below 10% in atmospheric temperature range between R.T. and 300°C, which is significantly smaller than those of conventional (Ba,Sr)TiO₃-based capacitors.

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Periodical:

Key Engineering Materials (Volume 485)

Pages:

191-194

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.485.191

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Online since:

July 2011

Authors:

Yuki Mizutani, Junichi Kimura, Itaru Takuwa, Tomoaki Yamada, Hiroshi Funakubo, Hiroshi Uchida

Keywords:

CaBi₄Ti₄O₁₅, Chemical Solution Deposition, Crystal Orientation, SrBi₄Ti₄O₁₅, Temperature Coefficient of Capacitance, Thin Film

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