Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature

Abstract:

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Thin films of MBi4Ti4O15 (M = Ca and Sr) with preferential crystal orientation were fabricated using underneath perovskite layers on various substrates. One-axis BLSD films on (100)LaNiO3/(111)Pt/Ti/(100)Si and epitaxial BLSD films on (100)SrRuO3//(100)SrTiO3 were fabricated by chemical solution deposition (CSD). Dielectric constants of the CaBi4Ti4O15 and SrBi4Ti4O15 films on (100)LaNiO3/(111)Pt/Ti/(100)Si were approximately 250, while those on (100)SrRuO3//(100)SrTiO3 were 220, respectively. The temperature coefficients of capacitance (TCCs) of these films were below 10% in atmospheric temperature range between R.T. and 300°C, which is significantly smaller than those of conventional (Ba,Sr)TiO3-based capacitors.

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Edited by:

Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki

Pages:

191-194

DOI:

10.4028/www.scientific.net/KEM.485.191

Citation:

Y. Mizutani et al., "Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature", Key Engineering Materials, Vol. 485, pp. 191-194, 2011

Online since:

July 2011

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$35.00

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