Growth of Orientation-Controlled Epitaxial KNbO3 Thin Film by Hydrothermal Method

Abstract:

Article Preview

KNbO3 thin films were deposited at 240 oC on various kinds of single crystal substrates by hydrothermal method using aqueous solutions containing Nb2O5 and KOH. The deposition amount of the films was found not to be much dependent on the orientation and the surface roughness of the substrates, but on the electrical conductivity of the substrate. Epitaxial {100}, {110} and {111}-oriented KNbO3 films with ferroelectricity were grown on (100)c, (110)c, and (111)c -oriented SrRuO3//(100)SrTiO3 substrates, respectively.

Info:

Periodical:

Edited by:

Chazono Hirokazu, Fujihara Shinobu, Katayama Keiichi, Masumoto Hiroshi, Mizoguchi Teruyasu, Osada Minoru, Shinozaki Kazuo and Takeda Hiroaki

Pages:

199-202

DOI:

10.4028/www.scientific.net/KEM.485.199

Citation:

H. Einishi et al., "Growth of Orientation-Controlled Epitaxial KNbO3 Thin Film by Hydrothermal Method", Key Engineering Materials, Vol. 485, pp. 199-202, 2011

Online since:

July 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.