Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range

Tsuyoshi Ogino; Naoki Ohashi; Shunichi Hishita; Isao Sakaguchi; Yutaka Adachi; Kunihiko Nakajima; Hajime Haneda

doi:10.4028/www.scientific.net/KEM.485.207

Paper Titles

Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature
p.191

Growth of (111)-Oriented Epitaxial Bi(Mg_0.5Ti_0.5)O₃ Films and their Characterization
p.195

Growth of Orientation-Controlled Epitaxial KNbO₃ Thin Film by Hydrothermal Method
p.199

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors
p.203

Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range
p.207

Fabrication and Evaluation of Al₂O₃ Films Using the Aerosol Deposition Method
p.211

Planarization of Zinc Oxide Surface and Evaluation of Processing Damage
p.215

Magnetic Properties of Epitaxial NiFe₂O₄ Thin Films Prepared Using Dynamic Aurora PLD in a Magnetic Field
p.221

Influence of Al₂O₃ Addition on the Temperature Dependence of Initial Permeability of NiCuZn Ferrites
p.225

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Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range

Abstract:

The resistivity of transparent conductive thin film formed by sputtering exhibits a dependence on film thickness. In this study, an analysis by electromagnetic field simulation of resistance effect on the transmission characteristics was carried out. The overall resistance of the signal waveguide governs the transmission characteristics, and variation of the resistance at the interface between the substrate and the thin film has no significant effect. We evaluated a structure in which fine metal wiring that is not visible to the eye is placed on transparent conductors to reduce the resistance of the transmitting waveguide. Electromagnetic field simulations suggest that this structure improves the transmission characteristics while keeping high transparency.