Fabrication and Evaluation of Al2O3 Films Using the Aerosol Deposition Method

Yuta Uemichi; Koji Nishikawa; Yuuki Sato; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.485.211

Paper Titles

Growth of (111)-Oriented Epitaxial Bi(Mg_0.5Ti_0.5)O₃ Films and their Characterization
p.195

Growth of Orientation-Controlled Epitaxial KNbO₃ Thin Film by Hydrothermal Method
p.199

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors
p.203

Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range
p.207

Fabrication and Evaluation of Al₂O₃ Films Using the Aerosol Deposition Method
p.211

Planarization of Zinc Oxide Surface and Evaluation of Processing Damage
p.215

Magnetic Properties of Epitaxial NiFe₂O₄ Thin Films Prepared Using Dynamic Aurora PLD in a Magnetic Field
p.221

Influence of Al₂O₃ Addition on the Temperature Dependence of Initial Permeability of NiCuZn Ferrites
p.225

Composite Electromagnetic Wave Absorber Made of Ni-Zn Ferrite Particles Dispersed and Isolated in an SiO₂ Medium
p.229

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Fabrication and Evaluation of Al₂O₃ Films Using the Aerosol Deposition Method

Abstract:

Equipment was designed for the application of Al₂O₃ thin films by the aerosol deposition method (ADM) at room temperature. Al₂O₃ film could be deposited on Pyrex-glass, indium tin oxide (ITO), polyvinyl chloride (PVC) plastic, single crystal silicon, and sapphire substrates. The films had the same crystal structure as the raw material particles and were highly transparent. The breakdown electric field of the Al₂O₃ film for the ADM was more than 35 kV/mm.